Title :
A novel RFCMOS process monitoring test structure
Author :
Sia, C.B. ; Ong, B.H. ; Lim, K.M. ; Yeo, K.S. ; Do, M.A. ; Ma, J.-G. ; Alam, T.
Author_Institution :
Adv. RFIC (S) Pte Ltd., Singapore, Singapore
Abstract :
A novel RFCMOS process monitoring test structure has been proposed for the first time in this paper. Excellent agreement in DC and RF characteristics has been observed between conventional test structures and the new process monitoring test structure for both n and p MOSFETs of different device dimensions. This new layout approach can be extended to other devices such as MIM capacitors, diodes, MOS varactors and interconnects.
Keywords :
CMOS integrated circuits; MOSFET; process monitoring; radiofrequency integrated circuits; semiconductor device testing; semiconductor technology; DC characteristics; MIM capacitors; MOS varactors; RF characteristics; RFCMOS; diodes; interconnects; n-MOSFET dimensions; p-MOSFET; process monitoring test structure; scribeline test structures; Circuit synthesis; Circuit testing; Electronic equipment testing; Foundries; Integrated circuit technology; Monitoring; Process design; Radio frequency; Radiofrequency integrated circuits; Silicon;
Conference_Titel :
Microelectronic Test Structures, 2004. Proceedings. ICMTS '04. The International Conference on
Print_ISBN :
0-7803-8262-5
DOI :
10.1109/ICMTS.2004.1309299
