Title :
MOSFET drain and induced-gate noise modeling and experimental verification for RF IC design
Author :
Chen, Chih-Hung ; Li, Feng ; Cheng, Yuhua
Author_Institution :
Dept. of Electr. & Comput. Eng., McMaster Univ., Hamilton, Ont., Canada
Abstract :
Analytical models for the induced gate noise and its correlation with the channel noise of MOSFETs including the channel-length modulation effect for radio-frequency integrated circuits are presented and verified with experiments. In addition, the implementation of the enhanced channel noise and the induced gate noise based on any compact MOSFET model using sub-circuit technique is described.
Keywords :
CMOS integrated circuits; MOSFET; UHF field effect transistors; UHF integrated circuits; flicker noise; hot carriers; semiconductor device models; semiconductor device noise; thermal noise; BSIM3 model; RFIC design; analytical models; channel noise; channel-length modulation effect; circuit simulator; compact MOSFET model; flicker noise; gradual channel region; hot electron effect; induced-gate noise modeling; long-channel transistors; noisy two-port network; subcircuit technique; thermal noise; velocity saturation region; Analytical models; Integrated circuit modeling; Integrated circuit noise; Intrusion detection; MOSFET circuits; Microelectronics; Radio frequency; Radiofrequency integrated circuits; Solid modeling; Testing;
Conference_Titel :
Microelectronic Test Structures, 2004. Proceedings. ICMTS '04. The International Conference on
Print_ISBN :
0-7803-8262-5
DOI :
10.1109/ICMTS.2004.1309300
