Title :
Fabrication of BaTiO/sub 3//SrTiO/sub 3/ artificial superlattice and its dielectric properties
Author :
Tsurumi, Takaaki ; Mitarai, S. ; Song-Min Nam
Author_Institution :
Dept. of Inorg. Mater., Tokyo Inst. of Technol., Japan
Abstract :
Artificial superlattices of BaTiO3/SrTiO3 were fabricated on Nb-doped SrTiO3 (001) substrates alternating evaporation method using a molecular epitaxy (MBE) apparatus. Streak patterns observed with an in-situ reflection high-energy electron diffraction (RHEED) indicated that two-dimensional atomic layer epitaxy was achieved during the deposition. Artificial superlattices with the structure of [(BaTiO3)m/(SrTiO3 )m]n, where (m, n)=(1, 40), (5, 8), (10, 4), (20, 2), (40, 1), were fabricated. X-ray diffraction analysis of satellite diffraction peaks indicated that the artificial superlattices had the designed structure. Dielectric permittivity of the artificial superlattices was measured as functions of frequency (C-f) and bias voltage (C-V). The C-f characteristic showed the dielectric relaxation, especially, in the structure of [(BaTiO3)20/(SrTiO 3)20]2 superlattice, and C-V curves showed hysteresis characteristic probably due to polarization reversals
Keywords :
X-ray diffraction; barium compounds; dielectric hysteresis; dielectric polarisation; dielectric relaxation; epitaxial layers; ferroelectric materials; ferroelectric thin films; reflection high energy electron diffraction; strontium compounds; superlattices; BaTiO/sub 3/-SrTiO/sub 3/; BaTiO/sub 3//SrTiO/sub 3/ artificial superlattice; C-V curves; C-f characteristic; MBE; X-ray diffraction; atomic layer epitaxy; bias voltage; dielectric permittivity; dielectric relaxation; hysteresis characteristic; polarization reversal; reflection high-energy electron diffraction; streak patterns; Capacitance-voltage characteristics; Dielectrics; Electrons; Epitaxial growth; Fabrication; Molecular beam epitaxial growth; Reflection; Substrates; Superlattices; X-ray diffraction;
Conference_Titel :
Applications of Ferroelectrics, 1996. ISAF '96., Proceedings of the Tenth IEEE International Symposium on
Conference_Location :
East Brunswick, NJ, USA
Print_ISBN :
0-7803-3355-1
DOI :
10.1109/ISAF.1996.602798
