DocumentCode
311809
Title
A DC-60 GHz GaAs MMIC switch using novel distributed FET
Author
Mizutani, H. ; Takayama, Y.
Author_Institution
C&C LSI Dev. Div., NEC Corp., Kawasaki, Japan
Volume
2
fYear
1997
fDate
8-13 June 1997
Firstpage
439
Abstract
This paper presents the broadest-band distributed FET MMIC switch ever reported for millimeter-wave applications. The developed switch with the novel structure indicated an insertion loss of less than 1.37 dB and an isolation of better than 23.1 dB with monotonous increase up to 39.6 dB from DC to 60 GHz.
Keywords
III-V semiconductors; JFET integrated circuits; equivalent circuits; field effect MIMIC; field effect transistor switches; gallium arsenide; integrated circuit design; 0 to 60 GHz; 1.37 dB; EHF; GaAs MMIC switch; HJFET process; distributed FET; insertion loss; millimeter-wave applications; Communication switching; Distributed parameter circuits; FETs; Gallium arsenide; Insertion loss; MMICs; Millimeter wave technology; Propagation losses; Switches; Switching circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1997., IEEE MTT-S International
Conference_Location
Denver, CO, USA
ISSN
0149-645X
Print_ISBN
0-7803-3814-6
Type
conf
DOI
10.1109/MWSYM.1997.602827
Filename
602827
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