DC and RF cryogenic behaviour of InAs/AlSb HEMTs

Author

Moschetti, G. ; Nilsson, P.-A. ; Desplanque, L. ; Wallart, X. ; Rodilla, H. ; Mateos, J. ; Grahn, J.

Author_Institution

Dept. of Microtechnol. & Nanosci.- MC2, Chalmers Univ. of Technol., Goteborg, Sweden

fYear

2010

fDate

May 31 2010-June 4 2010

Firstpage

1

Lastpage

4

Abstract

DC and RF properties are reported for InAs/AlSb HEMTs operating under cryogenic conditions (6 K) for a drain source bias up to 0.3 V. Compared to room temperature (300 K), a large improvement in device properties was observed: lower R_on, lower g_ds, a more distinct knee in the I_ds (V_ds) characteristics, increased f_T and a reduction of the gate leakage current of more than two orders of magnitude. This makes InAs/AlSb HEMT technology of large interest in cryogenic low-noise amplifier designs with high constraints on power dissipation.

Keywords

III-V semiconductors; aluminium compounds; cryogenic electronics; high electron mobility transistors; indium compounds; leakage currents; low noise amplifiers; wide band gap semiconductors; DC cryogenic behaviour; HEMT; InAs-AlSb; RF cryogenic behaviour; cryogenic low-noise amplifier; gate leakage current; power dissipation; temperature 300 K; Cryogenics; Electrical resistance measurement; Electron mobility; HEMTs; Intrusion detection; MODFETs; Power dissipation; Radio frequency; Temperature; Transmission line measurements;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide & Related Materials (IPRM), 2010 International Conference on

Conference_Location

Kagawa

ISSN

1092-8669

Print_ISBN

978-1-4244-5919-3

Type

conf

DOI

10.1109/ICIPRM.2010.5516313

Filename

5516313