Title :
DC and RF cryogenic behaviour of InAs/AlSb HEMTs
Author :
Moschetti, G. ; Nilsson, P.-A. ; Desplanque, L. ; Wallart, X. ; Rodilla, H. ; Mateos, J. ; Grahn, J.
Author_Institution :
Dept. of Microtechnol. & Nanosci.- MC2, Chalmers Univ. of Technol., Goteborg, Sweden
fDate :
May 31 2010-June 4 2010
Abstract :
DC and RF properties are reported for InAs/AlSb HEMTs operating under cryogenic conditions (6 K) for a drain source bias up to 0.3 V. Compared to room temperature (300 K), a large improvement in device properties was observed: lower Ron, lower gds, a more distinct knee in the Ids (Vds) characteristics, increased fT and a reduction of the gate leakage current of more than two orders of magnitude. This makes InAs/AlSb HEMT technology of large interest in cryogenic low-noise amplifier designs with high constraints on power dissipation.
Keywords :
III-V semiconductors; aluminium compounds; cryogenic electronics; high electron mobility transistors; indium compounds; leakage currents; low noise amplifiers; wide band gap semiconductors; DC cryogenic behaviour; HEMT; InAs-AlSb; RF cryogenic behaviour; cryogenic low-noise amplifier; gate leakage current; power dissipation; temperature 300 K; Cryogenics; Electrical resistance measurement; Electron mobility; HEMTs; Intrusion detection; MODFETs; Power dissipation; Radio frequency; Temperature; Transmission line measurements;
Conference_Titel :
Indium Phosphide & Related Materials (IPRM), 2010 International Conference on
Conference_Location :
Kagawa
Print_ISBN :
978-1-4244-5919-3
DOI :
10.1109/ICIPRM.2010.5516313
