DBIT-direct backside interconnect technology: a manufacturable, bond wire free interconnect technology for microwave and millimeter wave MMICs

Author

Kazior, T.E. ; Atkins, H.N. ; Fatemi, A. ; Chen, Y. ; Colomb, F.Y. ; Wendler, J.P.

Author_Institution

Adv. Device Center, Raytheon Electron., Andover, MA, USA

Volume

2

fYear

1997

fDate

8-13 June 1997

Firstpage

723

Abstract

A novel, highly manufacturable, low loss interconnect technique-DBIT (Direct Backside Interconnect Technology)-is presented. Polymer bumps are used to provide RF and ground interconnects between the backside of the MMIC chip and the substrate. The RF interconnects have been characterized up to 40 GHz. Measured interconnections have a 24 GHz bandwidth with 0.05 dB insertion loss at 10 GHz. This approach eliminates wire bonds which are known to introduce significant parasitics including a variable series inductance and which constraint the design of microwave MCMs and single chip packages.

Keywords

MIMIC; MMIC; inductance; integrated circuit interconnections; integrated circuit measurement; integrated circuit packaging; microwave measurement; millimetre wave measurement; multichip modules; 0.05 dB; 10 to 40 GHz; 24 GHz; DBIT; MCMs; MMICs; RF interconnects; direct backside interconnect technology; ground interconnects; insertion loss; interconnect technology; millimeter wave monolithic ICs; parasitics; single chip packages; variable series inductance; Bandwidth; Inductance; Insertion loss; Loss measurement; MMICs; Manufacturing; Polymers; Radio frequency; Semiconductor device measurement; Wire;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1997., IEEE MTT-S International

Conference_Location

Denver, CO, USA

ISSN

0149-645X

Print_ISBN

0-7803-3814-6

Type

conf

DOI

10.1109/MWSYM.1997.602892

Filename

602892