Input harmonics control using non-linear capacitor in GaAs FET power amplifier

Author

Kye-Ik Jeon ; Young-Se Kwon ; Song-Cheol Hong

Author_Institution

Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Seoul, South Korea

Volume

2

fYear

1997

fDate

8-13 June 1997

Firstpage

817

Abstract

We address the effect of gate signal distortion arising from capacitance non-linearity on the power added efficiencies of power amplifiers based on FETs. A novel method which can compensate the non-linearity of gate capacitance is proposed. The key idea is that a reversed diode is connected to the gate, where the gate and source part of a FET is simply modeled as a diode. We demonstrated this scheme with the load-pull and source-pull measurement of the circuit. A 7% increase in power added efficiency is achieved.

Keywords

III-V semiconductors; MMIC power amplifiers; compensation; electric distortion; field effect MMIC; gallium arsenide; harmonics; microwave power amplifiers; GaAs; GaAs FET power amplifier; capacitance nonlinearity; gate capacitance compensation; gate signal distortion; input harmonics control; nonlinear capacitor; power added efficiencies; reversed diode; Capacitance; Capacitors; Diodes; Distortion; FETs; Gallium arsenide; Power amplifiers; Power measurement; Power system harmonics; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1997., IEEE MTT-S International

Conference_Location

Denver, CO, USA

ISSN

0149-645X

Print_ISBN

0-7803-3814-6

Type

conf

DOI

10.1109/MWSYM.1997.602919

Filename

602919