Transfer characteristic of IM/sub 3/ relative phase for a GaAs FET amplifier

Author

Suematsu, N. ; Shigematsu, T. ; Iyama, Y. ; Ishida, O.

Author_Institution

Inf. Technol. R&D Center, Mitsubishi Electr. Corp., Kanagawa, Japan

Volume

2

fYear

1997

fDate

8-13 June 1997

Firstpage

901

Abstract

Measured transfer characteristic of relative phase of the third order intermodulation distortion (IM/sub 3/) of a GaAs FET amplifier is described. The measurement system and method are also described. For drives in the weakly nonlinear region, the measured relative phase of IM/sub 3/ is equal to that of carriers, and agrees with the analysis result based on Volterra-series representation. For drives in the saturation region, the measured relative phase of IM/sub 3/ versus the input power is larger than that of carrier´s relative phase. The measured results and the measurement method are useful for the design and adjustment of predistortion type linearizer for GaAs FET high power amplifiers.

Keywords

III-V semiconductors; UHF circuits; UHF measurement; UHF power amplifiers; gallium arsenide; intermodulation distortion; linearisation techniques; FET high power amplifiers; GaAs; IM/sub 3/ relative phase; UHF power amplifiers; Volterra-series representation; input power; measurement system; predistortion type linearizer; saturation region; third order intermodulation distortion; transfer characteristic; weakly nonlinear drives; Distortion measurement; Equations; FETs; Gallium arsenide; Intermodulation distortion; Nonlinear distortion; Phase measurement; Power measurement; Predistortion; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1997., IEEE MTT-S International

Conference_Location

Denver, CO, USA

ISSN

0149-645X

Print_ISBN

0-7803-3814-6

Type

conf

DOI

10.1109/MWSYM.1997.602945

Filename

602945