InP Mach–Zehnder Modulator Platform for 10/40/100/200-Gb/s Operation

Author

Griffin, R.A. ; Jones, Stephen K. ; Whitbread, Neil ; Heck, Susannah C. ; Langley, Lloyd N.

Author_Institution

Oclaro plc, Towcester, UK

Volume

19

Issue

6

fYear

2013

fDate

Nov.-Dec. 2013

Firstpage

158

Lastpage

166

Abstract

We describe the design and performance of a wavelength-flexible modulator platform based on multiple quantum well epitaxy on InP. The Mach-Zehnder modulator platform provides high levels of performance in a compact footprint, is suitable for high volume manufacturing, and is compatible with integration of a tunable laser source. Applications spanning 10-, 40-, 100-, and 200-Gb/s transmission are described.

Keywords

III-V semiconductors; Mach-Zehnder interferometers; electro-optical modulation; indium compounds; integrated optoelectronics; laser tuning; semiconductor quantum wells; InP; Mach-Zehnder Modulator Platform; bit rate 10 Gbit/s; bit rate 100 Gbit/s; bit rate 200 Gbit/s; bit rate 40 Gbit/s; quantum well epitaxy; tunable laser source; wavelength flexible modulator platform; Absorption; Electrodes; Electrooptic modulators; Indium phosphide; Quantum well devices; Radio frequency; Optical transmitters; integrated optoelectronics; optoelectronic devices; quadrature amplitude modulation;

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/JSTQE.2013.2270280

Filename

6556976