Title :
Physical and electrical characteristics for Si-doped GeSb9 phase-change memory
Author :
Perng, Yu Hsun ; Lin, Shu Yu ; Lai, Wen Yen ; Chou, Lih Hsin
Author_Institution :
Dept. of Mater. Sci. & Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
Abstract :
A phase-change random access memory device, consisting of GeSb9 based chalcogenide, TiW electrode and SiO2 dielectric layer, was fabricated in order to investigate the electrical characteristic and failure mechanism. Amorphous Si-doped GeSb9 with high crystallization temperature (235°C) exhibits extremely good thermal stability. Ten year data retention of 164°C shows the remarkable device reliability. After the continuous voltage sweeping of 1.6 V, an unexpected failure was observed via transmission electron microscopy (TEM) image. The failure mechanism was clarified and Si-doped GeSb9 based PRAM material is concluded to be potential in virtue of its improved device reliability and thermal stability.
Keywords :
elemental semiconductors; failure analysis; germanium compounds; integrated circuit reliability; phase change memories; random-access storage; silicon; thermal stability; GeSb9:Si; PRAM material; chalcogenide; continuous voltage sweeping; device reliability; dielectric layer; electrical characteristics; failure mechanism; phase-change random access memory device; temperature 164 degC; temperature 235 degC; thermal stability; voltage 1.6 V; Electrodes; Failure analysis; Phase change random access memory; Resistance; Silicon; Temperature measurement; Thermal stability; Ge-Sb alloy; crystallization; electrical properties; failure analysis; phase change random access memory; silicon doping; thermal propertied;
Conference_Titel :
Non-Volatile Memory Technology Symposium (NVMTS), 2011 11th Annual
Conference_Location :
Shanghai
Print_ISBN :
978-1-4577-1428-3
DOI :
10.1109/NVMTS.2011.6137081
