Title :
A novel read-while-write (RWW) algorithm for phase change memory
Author :
Sheng, Ding ; Zhitang, Song ; Houpeng, Chen
Author_Institution :
State Key Lab. of Functional Mater. for Inf., Shanghai Inst. of Micro-Syst. & Inf. Technol., Shanghai, China
Abstract :
A novel read-while-write (RWW) algorithm for phase change memory (PCM) is proposed. It performs the verify operation for last cell, the write operation for current cell and the pre-read operation for next cell simultaneously. Therefore, it can reduce the timing cost by the data-comparison write (DCW) algorithm and the program & verify (P&V) algorithm. The performance analysis and simulation results show that the percent of saving timing by RWW is >;22.6%.
Keywords :
phase change memories; RWW algorithm; data-comparison write algorithm; phase change memory; program & verify algorithm; read-while-write algorithm; Computer architecture; Microprocessors; Phase change materials; Phase change memory; Registers; Switches; Timing; DCW; P&V; PCM; RWW; algorithm;
Conference_Titel :
Non-Volatile Memory Technology Symposium (NVMTS), 2011 11th Annual
Conference_Location :
Shanghai
Print_ISBN :
978-1-4577-1428-3
DOI :
10.1109/NVMTS.2011.6137084
