DocumentCode :
31224
Title :
Effect of Germanium Preamorphization Implant on Performance and Gate-Induced Drain Leakage in SiGe Channel pFET
Author :
Tiwari, Vishal A. ; Young Way Teh ; Jaeger, Daniel ; Divakaruni, Rama ; Nair, Deleep R.
Author_Institution :
Dept. of Electr. Eng., IIT Madras, Chennai, India
Volume :
36
Issue :
6
fYear :
2015
fDate :
Jun-15
Firstpage :
531
Lastpage :
533
Abstract :
Silicon-germanium (SiGe) channel pMOSFET is considered as a replacement for silicon channel device for 32-nm node and beyond, because of its lower threshold voltage and higher channel mobility. Lower SiGe bandgap makes gate-induced drain leakage (GIDL) important for low leakage, high threshold voltage device designs. In this letter, the effect of prehalo/LDD Ge preamorphization implant (PAI) on GIDL and performance is investigated using experimental data and simulations. Results suggest that GIDL reduction of ~40% is achieved without Ge PAI and the total OFF-state leakage (IOFF) is reduced by ~50% with a slight reduction in drive current (ION) and similar short-channel effects as compared with the case with PAI for same process conditions, which is not reported yet. The reduction in GIDL, and hence the improvement in ION/IOFF ratio is because of elimination of end-of-range defects at the source/drain sidewall junction regions. It is also shown that a slight reduction in ION in the absence of Ge PAI is because of a small increase in the extrinsic series resistance.
Keywords :
Ge-Si alloys; MOSFET; amorphisation; energy gap; ion implantation; leakage currents; semiconductor materials; GIDL; IOFF; LDD germanium preamorphization implant effect; OFF-state leakage; PAI; SiGe; bandgap; channel mobility; drive current; end-of-range defects; extrinsic series resistance; gate-induced drain leakage; low leakage high threshold voltage device designs; prehalo effect; short-channel effects; silicon channel device; silicon-germanium channel pMOSFET; size 32 nm; source-drain sidewall junction regions; Implants; Junctions; Logic gates; Resistance; Silicon; Silicon germanium; Threshold voltage; Gate-induced drain leakage (GIDL); high- $k$ metal gate-first process; high-k metal gate-first process; pre-amorphization implant (PAI); series resistance; silicon-germanium (SiGe) channel;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2015.2424297
Filename :
7088557
Link To Document :
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