DocumentCode
3122802
Title
Integrated RF micro-coils on porous silicon
Author
Populaire, C. ; Remaki, B. ; Armenean, M. ; Perrin, E. ; Beuf, O. ; Saint-Jalmes, H. ; Barbier, D.
Author_Institution
Lab. Phys. de la Matiere, INSA de Lyon-CNRS, Lyon, France
fYear
2004
fDate
24-27 Oct. 2004
Firstpage
1064
Abstract
Porous silicon (PS) of up to 400 μm with high porosity (70%) has been studied to integrate high-performance micro-coils on heavily doped Si substrates (7-15 mΩcm). 2 μm-thick Au spiral inductors with L∼15 nH were fabricated; they demonstrate a quality factor Q up to 8 in the 0,1 to 2 GHz frequency range. Substrate loss is greatly lowered, down to ∼12 Ω at 400 MHz, which offers attractive potentialities for high resolution RMN (80-500 MHz) spectroscopy integrated devices.
Keywords
UHF integrated circuits; gold; porous semiconductors; silicon; substrates; thin film inductors; 0.1 to 2 GHz; 2 micron; 7 to 15 mohmcm; 80 to 500 MHz; Q-factor; Si; gold spiral inductors; heavily doped silicon substrates; integrated RF micro-coils; integrated devices; porosity; porous silicon; quality factor; Energy resolution; Glass; Gold; Inductors; Radio frequency; Signal resolution; Silicon; Spirals; Substrates; Thermal stresses;
fLanguage
English
Publisher
ieee
Conference_Titel
Sensors, 2004. Proceedings of IEEE
Print_ISBN
0-7803-8692-2
Type
conf
DOI
10.1109/ICSENS.2004.1426358
Filename
1426358
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