Title :
Properties and applications of Sn-doped single crystal thin film magneto-resistance elements
Author :
Nishimura, K. ; Goto, H. ; Yamada, S. ; Geka, H. ; Okamoto, A. ; Shibasaki, I.
Author_Institution :
Asahikasei Corp., Fujian, China
Abstract :
Using Sn-doped single crystal InSb thin films of 1.0-μm thickness grown on GaAs substrates by molecular beam epitaxy, new magneto-resistance elements with very small temperature dependence were developed. Using these magneto-resistance elements, the contactless detection of the rotation speed of rotating gear teeth over a wide range of rotation speeds was studied. The output voltage from the magneto-resistance element was independent of the rotation speed of the gear, and exhibited good temperature stability and very small sine wave sine wave distortion, which allowed fine detection of the angular velocity of the rotations.
Keywords :
angular velocity measurement; gallium arsenide; indium compounds; magnetic sensors; magnetoresistive devices; molecular beam epitaxial growth; semiconductor doping; semiconductor epitaxial layers; substrates; tin; 1.0 micron; GaAs; InSb:Sn; angular velocity; gallium arsenide substrates; molecular beam epitaxy; rotating gear teeth; rotation speed detection; single crystal thin film magneto-resistance elements; temperature dependence; tin-doped single crystal indium antimonide thin films; Gallium arsenide; Gears; Magnetic properties; Molecular beam epitaxial growth; Stability; Substrates; Teeth; Temperature dependence; Transistors; Voltage;
Conference_Titel :
Sensors, 2004. Proceedings of IEEE
Print_ISBN :
0-7803-8692-2
DOI :
10.1109/ICSENS.2004.1426368
