Title :
Fabrication and characterization of Ni/GaN Schottky junction erythemal UV detectors
Author :
Lui, H.F. ; Fong, W.K. ; Surya, C.
Author_Institution :
Dept. of Electron. & Inf. Eng., Hong Kong Polytech. Univ., Hong Kong, China
Abstract :
We report the novel design of an erythemal UV photodetector consisting of two Ni/GaN Schottky junctions in anti-parallel configuration. A polymer film was deposited on top of one of the junctions. This configuration enables cancellation of photocurrent for wavelengths above 300 nm.
Keywords :
III-V semiconductors; Schottky barriers; coating techniques; gallium compounds; nickel; photodetectors; ultraviolet detectors; wide band gap semiconductors; Ni-GaN; Schottky junction; anti-parallel configuration; erythemal UV detectors; polymer film; Aluminum gallium nitride; Detectors; Electromagnetic wave absorption; Fabrication; Gallium nitride; Photoconductivity; Photodetectors; Photonic band gap; Polymer films; Solid state circuits;
Conference_Titel :
OptoElectronics and Communications Conference, 2009. OECC 2009. 14th
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-4102-0
Electronic_ISBN :
978-1-4244-4103-7
DOI :
10.1109/OECC.2009.5218127
