Title :
Observation of strong many-body effects in thin InN films grown on GaN buffer layers
Author :
Mu, Xiaodong ; Ding, Yujie J. ; Wang, Kejia ; Jena, Debdeep ; Khurgin, Jacob B.
Author_Institution :
Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA
Abstract :
Here, we present our new results following our studies of the temperatureand intensity-dependent photoluminescence (PL) spectra. We grew two samples of the InN thin films by using molecular-beam epitaxy. Both of the films were deposited on the 4-mum-thick semi-insulating GaN buffer layers. These buffer layers were directly grown on the (0001) sapphire substrates
Keywords :
III-V semiconductors; gallium compounds; indium compounds; molecular beam epitaxial growth; photoluminescence; sapphire; semiconductor thin films; 4 micron; Al2O3; GaN; GaN buffer layers; InN; intensity-dependent PL spectra; many-body effects; molecular-beam epitaxy; sapphire substrates; temperature-dependent photoluminescence spectra; thin InN films growth; Buffer layers; Charge carrier processes; Electrons; Gallium nitride; Laser excitation; Photonic band gap; Radiative recombination; Spontaneous emission; Temperature measurement; Transistors;
Conference_Titel :
Lasers and Electro-Optics Society, 2006. LEOS 2006. 19th Annual Meeting of the IEEE
Conference_Location :
Montreal, Que.
Print_ISBN :
0-7803-9555-7
Electronic_ISBN :
0-7803-9555-7
DOI :
10.1109/LEOS.2006.278807
