Title :
ONO charging at different stages of microFlash® process flow
Author :
Lisiansk, Michael ; Roizin, Yakov ; Gutman, Micha ; Keysar, Shani ; Ben-Guigui, Avi ; Berreby, Moshe
Author_Institution :
Tower Semicond. Ltd., Migdal Haemek, Israel
Abstract :
In-process ultraviolet (UV) stimulated charging of ONO (oxide-nitride-oxide) stack is observed in fieldless microFlash (NROM) memory arrays. This problem is solved by introducing a UV blocking layer into the D1 dielectric. In this paper we discuss an alternative approach to the solution of charging problem. A micropartitioning technique is described that allows to screen out the operations responsible for ONO charging and corresponding equipment.
Keywords :
flash memories; plasma materials processing; sputter etching; surface charging; ultraviolet radiation effects; ONO charging; ONO stack; fieldless memory arrays; in-process ultraviolet stimulated charging; memory density; metal etch steps; microFlash process flow; micropartitioning technique; plasma emitted radiation; plasma generated voltage; ultraviolet blocking layer; Capacitors; Etching; Fingers; Plasma applications; Plasma displays; Plasma materials processing; Plasma measurements; Plasma properties; Protection; Voltage;
Conference_Titel :
Integrated Circuit Design and Technology, 2004. ICICDT '04. International Conference on
Print_ISBN :
0-7803-8528-4
DOI :
10.1109/ICICDT.2004.1309951
