DocumentCode :
3124660
Title :
Detection of sub-Terahertz and Terahertz radiation by plasma waves in silicon field effect transistors
Author :
Teppe, F. ; Meziani, Y. ; Dyakonova, N. ; Lusakowski, J. ; Knap, W. ; Boeuf, F. ; Skotnicki, T. ; Maude, D. ; Rumyantsev, S. ; Shur, M.S.
Author_Institution :
Comput. & Syst. Eng. Dept., Rensselaer Polytech. Inst., Troy, NY, USA
fYear :
2004
fDate :
24-27 Oct. 2004
Firstpage :
1337
Abstract :
We report on the first experiments on detection of the sub-THz and THz (120 GHz and 3 THz) radiation using Si FETs with nanometer and submicron gate lengths at 300 K. The observed photo-response is in agreement with the predictions of the Dyakonov-Shur theory. The plasma wave parameters deduced from the experiments allow us to predict the non resonant and resonant detection in the THz range by nanometer size silicon devices.
Keywords :
MOSFET; photodetectors; plasma waves; submillimetre wave detectors; 120 GHz to 3 THz; 300 K; Dyakonov-Shur theory; FET photo-response; FET plasma waves; MOSFET gate length; Si; Terahertz radiation detection; nanometer size devices; nonresonant detection; resonant detection; sub-Terahertz radiation detection; Charge carrier density; Electrons; FETs; Frequency; Plasma temperature; Plasma waves; Radiation detectors; Resonance; Silicon radiation detectors; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Sensors, 2004. Proceedings of IEEE
Print_ISBN :
0-7803-8692-2
Type :
conf
DOI :
10.1109/ICSENS.2004.1426430
Filename :
1426430
Link To Document :
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