DocumentCode
3124660
Title
Detection of sub-Terahertz and Terahertz radiation by plasma waves in silicon field effect transistors
Author
Teppe, F. ; Meziani, Y. ; Dyakonova, N. ; Lusakowski, J. ; Knap, W. ; Boeuf, F. ; Skotnicki, T. ; Maude, D. ; Rumyantsev, S. ; Shur, M.S.
Author_Institution
Comput. & Syst. Eng. Dept., Rensselaer Polytech. Inst., Troy, NY, USA
fYear
2004
fDate
24-27 Oct. 2004
Firstpage
1337
Abstract
We report on the first experiments on detection of the sub-THz and THz (120 GHz and 3 THz) radiation using Si FETs with nanometer and submicron gate lengths at 300 K. The observed photo-response is in agreement with the predictions of the Dyakonov-Shur theory. The plasma wave parameters deduced from the experiments allow us to predict the non resonant and resonant detection in the THz range by nanometer size silicon devices.
Keywords
MOSFET; photodetectors; plasma waves; submillimetre wave detectors; 120 GHz to 3 THz; 300 K; Dyakonov-Shur theory; FET photo-response; FET plasma waves; MOSFET gate length; Si; Terahertz radiation detection; nanometer size devices; nonresonant detection; resonant detection; sub-Terahertz radiation detection; Charge carrier density; Electrons; FETs; Frequency; Plasma temperature; Plasma waves; Radiation detectors; Resonance; Silicon radiation detectors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Sensors, 2004. Proceedings of IEEE
Print_ISBN
0-7803-8692-2
Type
conf
DOI
10.1109/ICSENS.2004.1426430
Filename
1426430
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