Title :
Improvement of electromigration resistance of layered aluminum conductors
Author :
Hinode, Kenji ; Homma, Yoshio
Author_Institution :
Hitachi Ltd., Tokyo, Japan
Abstract :
The electromigration of layered fine Al conductors (AlSi/TiN, AlSi/W, over/under) is discussed. The study indicates that (1) layering with refractory metals degrades the migration immunity of the Al layer, (2) refractory metal layers tend to suppress Al grain growth and crystal orientation, (3) by improving the film properties of refractory metals and optimizing the layer structure to minimize this grain growth suppression, conductor lifetimes can be lengthened by one or more orders of magnitude over those of conventionally layered or monolayer conductors.<>
Keywords :
VLSI; aluminium; aluminium alloys; electromigration; integrated circuit technology; life testing; metallic thin films; metallisation; silicon alloys; AlSi-TiN; AlSi-W; crystal orientation; electromigration resistance; grain growth suppression; interconnects; layer structure; layered aluminum conductors; layered fine Al conductors; migration immunity; monolayer conductors; refractory metals; submicron VLSI; Aluminum; Artificial intelligence; Conducting materials; Conductive films; Conductors; Electromigration; Optical films; Stress; Testing; Tin;
Conference_Titel :
Reliability Physics Symposium, 1990. 28th Annual Proceedings., International
Conference_Location :
New Orleans, LA, USA
DOI :
10.1109/RELPHY.1990.66056
