Title :
A Novel High-Density Single-Event Upset Hardened Configurable SRAM Applied to FPGA
Author :
Wang, Lei ; Chen, Lei ; Wen, Zhiping ; Sun, Huabo ; Wang, Shuo
Author_Institution :
Dept. Design, Beijing Microelectron. Tech. Instn. (BMTI), Beijing, China
Abstract :
This paper has investigated present radiation hardened FPGA manufacturers and SEU hardened method of configurable SRAM (CSRAM) applied to FPGA. A novel high-density single-event upset hardened CSRAM applied to BQV 300 FPGA is proposed, and this paper uses the mix-mode radiation hardened verification method to simulate the SEU hardened CSRAM. The proposed SEU-hardened CSRAM applied to FPGAs is SEU immune up to 22.49 MeV·cm2/mg, under the angle for incident ion of 0°. But the area of proposed CSRAM only increases 12% than traditional 6-T SRAM, and the area of DICE will increase 69% than proposed CSRAM. Using the proposed CSRAM makes BQV 300 FPGA able to be fabricated. The SEU LETth is much higher than SEU LETth of CSRAM for Xilinx´s FPGA.
Keywords :
SRAM chips; field programmable gate arrays; radiation hardening (electronics); DICE; FPGA; SEU hardened CSRAM; configurable SRAM; high-density single-event upset; mix-mode radiation hardened verification method; Aerospace industry; Field programmable gate arrays; Frequency; Manufacturing; Microelectronics; Radiation hardening; Random access memory; Single event upset; Space technology; Sun; CSRAM; FPGA; HSPICE; Heavy ion; Medici;
Conference_Titel :
Reconfigurable Computing and FPGAs, 2009. ReConFig '09. International Conference on
Conference_Location :
Quintana Roo
Print_ISBN :
978-1-4244-5293-4
Electronic_ISBN :
978-0-7695-3917-1
DOI :
10.1109/ReConFig.2009.13