Title :
MBE-grown Mn-doped SnSe2 2D films on GaAs (111)B substrates
Author :
Liu, X. ; Li, X. ; Vishwanath, S. ; Dong, S. ; Yoo, T. ; Jena, D. ; Xing, H. ; Dobrowolska, M. ; Furdyna, J.K.
Author_Institution :
Dept. of Phys., Univ. of Notre Dame, Notre Dame, IN, USA
Abstract :
Intensive research is currently being aimed at understanding both the growth and the physical properties of a wide range of two-dimensional (2D) materials, since this class of materials is expected to lead to entirely new types of devices on the nanoscale. Additionally, the introduction of magnetic dopants into a 2D lattice can bring out new functionalities, providing new opportunities for spintronic applications. In this work we explore this area by introducing Mn ions into the 2D lattice of SnSe2. The growth of Mn-doped SnSe2 films was carried out by molecular beam epitaxy (MBE) on GaAs (111)B substrates by varying the flux of Mn during the growth. Rigorous characterization of the physical properties of this material was carried out by a wide range of complementary studies, including RHEED, XRD, electric-transport and Raman spectroscopy.
Keywords :
Raman spectra; X-ray diffraction; magnetic thin films; manganese compounds; molecular beam epitaxial growth; reflection high energy electron diffraction; semiconductor growth; semiconductor thin films; semimagnetic semiconductors; tin compounds; 2D lattice; GaAs; GaAs (111)B substrates; Mn flux; Mn ions; RHEED; Raman spectroscopy; SnSe2:Mn; XRD; electric-transport; magnetic dopants; molecular beam epitaxy-grown Mn-doped 2D films; physical properties; spintronic applications; Gallium arsenide; Lattices; Magnetic flux; Manganese; Molecular beam epitaxial growth; Substrates;
Conference_Titel :
Magnetics Conference (INTERMAG), 2015 IEEE
Conference_Location :
Beijing
Print_ISBN :
978-1-4799-7321-7
DOI :
10.1109/INTMAG.2015.7156850
