Title :
Low field mobility characteristics of sub-100 nm unstrained and strained Si MOSFETs
Author :
Rim, K. ; Narasimha, S. ; Longstreet, M. ; Mocuta, A. ; Cai, J.
Author_Institution :
IBM Semicond. Res. & Dev. Center, T. J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
A novel mobility extraction technique showed that the mobility enhancements in strained Si MOSFETs were retained in deep sub-100 nm channel lengths. Mobility measurement in devices with channel lengths down to 40 nm was demonstrated by a dR/dL extraction method. The results confirmed and quantified the mobility enhancements despite the presence of high halo doping in scaled strained Si MOSFETs.
Keywords :
MOSFET; carrier mobility; elemental semiconductors; silicon; 40 to 100 nm; Si; halo doping; low-field mobility; parameter extraction; strained Si MOSFET; unstrained Si MOSFET; CMOS technology; Current measurement; Dielectrics; Doping; Electrical resistance measurement; Length measurement; MOSFETs; Performance analysis; Semiconductor process modeling; Uncertainty;
Conference_Titel :
Electron Devices Meeting, 2002. IEDM '02. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7462-2
DOI :
10.1109/IEDM.2002.1175775
