Title :
Impact of a Pocket Doping on the Device Performance of a Schottky Tunneling Field-Effect Transistor
Author :
Guin, Shilpi ; Chattopadhyay, Abhiroop ; Karmakar, A. ; Mallik, Abhidipta
Author_Institution :
Dept. of Electron. Sci., Univ. of Calcutta, Kolkata, India
Abstract :
It is known that a pocket at the drain end of a Schottky barrier tunneling FET (SB-TFET) helps to improve the device performance in terms of greatly suppressed ambipolar current and reduced drain-induced barrier lowering (DIBL). A detailed investigation, with the help of a numerical device simulator, of the impact of using such a pocket either at the source end or at both the source and the drain ends of an SB-TFET is reported for the first time in this paper. The performance of the above-mentioned two devices is compared with a device having a pocket at the drain end and a conventional MOSFET. Optimization of the barrier height and the pocket parameters is made before performance comparison. It is observed that a pocket at the drain end helps suppress the ambipolar current and reduce both the subthreshold swing and the DIBL. On the other hand, a pocket at the source end helps to improve the ON-state current ION. Using a pocket at both the source and the drain ends results in overall improvement of the device performance. The effects of scaling on such device performance parameters are also reported.
Keywords :
MOSFET; Schottky barriers; Schottky gate field effect transistors; optimisation; semiconductor doping; tunnel transistors; DIBL; MOSFET; SB-TFET; Schottky barrier tunneling FET; Schottky tunneling field-effect transistor; ambipolar current; barrier height optimization; device performance; drain end; drain-induced barrier lowering; numerical device simulator; pocket doping; Doping; Logic gates; MOSFET; Performance evaluation; Schottky barriers; Tunneling; (I_{mathrm{{scriptstyle ON}}}/I_{mathrm{{scriptstyle OFF}}}) ratio; Drain-induced barrier lowering (DIBL); ION/IOFF ratio; OFF -state current (I_{mathrm{{scriptstyle OFF}}}); OFF-state current IOFF; ON -state current (I_{mathrm{{scriptstyle ON}}}); ON-state current ION; Schottky-barrier tunneling FET (SB-TFET); subthreshold swing (SS); subthreshold swing (SS).;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2014.2325068