DocumentCode :
3127841
Title :
A novel small capacitance RF-MOSFET with small-resistance Long-finger Gate Electrode
Author :
Nagase, Hirokazu ; Tanabe, Akira ; Hayashi, Yoshihiro
Author_Institution :
LSI Fundamental Res. Lab., NEC Electron. Corp., Sagamihara, Japan
fYear :
2010
fDate :
23-28 May 2010
Firstpage :
944
Lastpage :
947
Abstract :
We have developed a small capacitance RF-MOSFET with small-resistance long-finger gate electrode, which is featured by Direct Finger Contact (DFC) on the gate electrode in active region to reduce its resistance. The unique structure and layout, which is different from a conventional multiplied-short-finger MOSFET, suppress the parasitic capacitance around the gate electrode to obtain high fT. This layout-optimized DFC MOSFET is very useful for RF/Mixed signal SoCs in deep-sub-micron generations.
Keywords :
MOSFET; capacitance; electrodes; semiconductor device models; direct finger contact; parasitic capacitance; small capacitance RF-MOSFET; small-resistance long-finger gate electrode; CMOS process; CMOS technology; Contact resistance; Digital-to-frequency converters; Electrodes; Fingers; MOSFET circuits; Parasitic capacitance; Radio frequency; Wire; MOSFET; capacitance; fT; fmax; gate electrode; noise; resistance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International
Conference_Location :
Anaheim, CA
ISSN :
0149-645X
Print_ISBN :
978-1-4244-6056-4
Electronic_ISBN :
0149-645X
Type :
conf
DOI :
10.1109/MWSYM.2010.5516755
Filename :
5516755
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3127841
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