Title :
HiSIM: a MOSFET model for circuit simulation connecting circuit performance with technology
Author :
Miura-Mattausch, M. ; Ueno, H. ; Tanaka, Mitsuru ; Mattausch, H.J. ; Kumashiro, S. ; Yamaguchi, T. ; Yamashita, K. ; Nakayama, N.
Author_Institution :
Graduate Sch. of Adv. Sci. of Matter, Hiroshima Univ., Japan
Abstract :
Circuit simulation models should be pragmatic, but should be accurate at the same time. HiSIM (Hiroshima-University STARC IGFET Model), aiming to fulfil both requirements, is based on an iterative surface-potential determination in 2D device simulators. However, the essence of each technology is extracted from measurements, thus simplifying modeling procedure and allowing large-scale circuit simulation with 0.1 /spl mu/m-MOSFET technologies.
Keywords :
MOSFET; circuit simulation; iterative methods; semiconductor device models; 0.1 micron; 2D device simulators; HiSIM; MOSFET model; STARC IGFET model; circuit simulation model; iterative surface-potential determination; large-scale circuit simulation; Circuit optimization; Circuit simulation; Joining processes; MOSFET circuits; Performance analysis; Poisson equations; Predictive models; Size control; Size measurement; Surface treatment;
Conference_Titel :
Electron Devices Meeting, 2002. IEDM '02. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7462-2
DOI :
10.1109/IEDM.2002.1175790
