DocumentCode
3128307
Title
Recent progress in modularly integrated MEMS technologies
Author
King, Tsu-Jae ; Howe, Roger T. ; Sedky, Sherif ; Liu, Gang ; Lin, Blake C Y ; Wasilik, Matthew ; Duenn, Christoph
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
fYear
2002
fDate
8-11 Dec. 2002
Firstpage
199
Lastpage
202
Abstract
Various approaches to post-CMOS, monolithic integration of MEMS with electronics are described. In particular, recent progress toward a high-performance, low-process-temperature MEMS technology based on polycrystalline silicon-germanium (poly-SiGe) is presented.
Keywords
Ge-Si alloys; chemical vapour deposition; crystallisation; laser beam annealing; micromechanical devices; semiconductor materials; semiconductor thin films; SiGe; SiGe deposition process optimization; low-process-temperature MEMS technology; metal-induced crystallization; micro-electro-mechanical devices; microelectronics; modularly integrated MEMS technologies; monolithic integration; poly-SiGe; polycrystalline SiGe; post-CMOS integration; pulsed laser annealing; CMOS process; CMOS technology; Electronics industry; Etching; Germanium silicon alloys; Industrial electronics; Microelectromechanical devices; Micromechanical devices; Radio frequency; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2002. IEDM '02. International
Conference_Location
San Francisco, CA, USA
Print_ISBN
0-7803-7462-2
Type
conf
DOI
10.1109/IEDM.2002.1175812
Filename
1175812
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