DocumentCode
3128992
Title
Soft errors in SRAM devices induced by high energy neutrons, thermal neutrons and alpha particles
Author
Kobayashi, Hajime ; Shiraishi, Ken ; Tsuchiya, Hiroo ; Motoyoshi, Makoto ; Usuki, Hideki ; Nagai, Yasuki ; Takahisa, Keiji ; Yoshiie, Toshimasa ; Sakurai, Yoshinori ; Ishizaki, Toshitaka
Author_Institution
Tech. Solutions Center, Sony Corp., Atsugi, Japan
fYear
2002
fDate
8-11 Dec. 2002
Firstpage
337
Lastpage
340
Abstract
We measured the soft error rates (SER) of SRAM devices in several field tests, and obtained SERs induced independently by high energy neutrons, thermal neutrons and alpha particles. It was found that the thermal neutron induced SER was approximately three times larger than the high energy neutron induced SER in 0.18 /spl mu/m 8M SRAMs, and that the alpha particle induced SER was negligible. We also performed accelerated tests for thermal neutrons using a nuclear reactor, and found that the thermal neutron induced SER can be reduced by factors of up to several hundreds by using thermal neutron shield sheets or by eliminating BPSG layers.
Keywords
SRAM chips; alpha-particle effects; neutron effects; 0.18 micron; 8 Mbit; SRAM device; alpha particle irradiation; high energy neutron irradiation; soft error rate; thermal neutron irradiation; Alpha particles; Energy measurement; Error analysis; Life estimation; Neutrons; Particle measurements; Performance evaluation; Random access memory; Testing; Thermal factors;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2002. IEDM '02. International
Conference_Location
San Francisco, CA, USA
Print_ISBN
0-7803-7462-2
Type
conf
DOI
10.1109/IEDM.2002.1175847
Filename
1175847
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