• DocumentCode
    3128992
  • Title

    Soft errors in SRAM devices induced by high energy neutrons, thermal neutrons and alpha particles

  • Author

    Kobayashi, Hajime ; Shiraishi, Ken ; Tsuchiya, Hiroo ; Motoyoshi, Makoto ; Usuki, Hideki ; Nagai, Yasuki ; Takahisa, Keiji ; Yoshiie, Toshimasa ; Sakurai, Yoshinori ; Ishizaki, Toshitaka

  • Author_Institution
    Tech. Solutions Center, Sony Corp., Atsugi, Japan
  • fYear
    2002
  • fDate
    8-11 Dec. 2002
  • Firstpage
    337
  • Lastpage
    340
  • Abstract
    We measured the soft error rates (SER) of SRAM devices in several field tests, and obtained SERs induced independently by high energy neutrons, thermal neutrons and alpha particles. It was found that the thermal neutron induced SER was approximately three times larger than the high energy neutron induced SER in 0.18 /spl mu/m 8M SRAMs, and that the alpha particle induced SER was negligible. We also performed accelerated tests for thermal neutrons using a nuclear reactor, and found that the thermal neutron induced SER can be reduced by factors of up to several hundreds by using thermal neutron shield sheets or by eliminating BPSG layers.
  • Keywords
    SRAM chips; alpha-particle effects; neutron effects; 0.18 micron; 8 Mbit; SRAM device; alpha particle irradiation; high energy neutron irradiation; soft error rate; thermal neutron irradiation; Alpha particles; Energy measurement; Error analysis; Life estimation; Neutrons; Particle measurements; Performance evaluation; Random access memory; Testing; Thermal factors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2002. IEDM '02. International
  • Conference_Location
    San Francisco, CA, USA
  • Print_ISBN
    0-7803-7462-2
  • Type

    conf

  • DOI
    10.1109/IEDM.2002.1175847
  • Filename
    1175847