Title :
Dual-metal gate CMOS with HfO2 gate dielectric
Author :
Samavedam, S.B. ; La, L.B. ; Smith, J. ; Dakshina-Murthy, S. ; Luckowski, E. ; Schaeffer, J. ; Zavala, M. ; Martin, Rashad ; Dhandapani, V. ; Triyoso, D. ; Tseng, H.H. ; Tobin, P.J. ; Gilmer, D.C. ; Hobbs, C. ; Taylor, W.J. ; Grant, J.M. ; Hegde, R.I. ; M
Author_Institution :
Motorola Digital DNATM Labs., Austin, TX, USA
Abstract :
We report for the first time on a novel dual-metal gate CMOS integration on HfO/sub 2/ gate dielectric using TiN (PMOS) and TaSiN (NMOS) gate electrodes. Compared to a single metal integration, the dual-metal integration does not degrade gate leakage, mobility and charge trapping behavior. Promising preliminary TDDB data were obtained from dual-metal gate MOSFETs, while still delivering much improved gate leakage (10/sup 4/ - 10/sup 5/ X better than SiO/sub 2/).
Keywords :
CMOS integrated circuits; MOSFET; carrier mobility; dielectric thin films; hafnium compounds; integrated circuit metallisation; leakage currents; semiconductor device reliability; HfO/sub 2/; HfO/sub 2/ gate dielectric; TDDB data; TaSiN; TaSiN gate electrodes; TiN; TiN gate electrodes; charge trapping behavior; dual-metal gate CMOS; dual-metal gate MOSFETs; gate leakage; mobility behavior; Atherosclerosis; Dielectrics; Hafnium oxide; MOCVD; MOS devices; MOSFET circuits; Random access memory; Robustness; Tin; Wet etching;
Conference_Titel :
Electron Devices Meeting, 2002. IEDM '02. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7462-2
DOI :
10.1109/IEDM.2002.1175871
