DocumentCode
3129698
Title
Magnetically-actuated dielectric cantilever RF MEMS switches
Author
Fomani, A.A. ; Fouladi, S. ; Mansour, R.R.
Author_Institution
Center for Integrated RF Eng. (CIRFE), Univ. of Waterloo, Waterloo, ON, Canada
fYear
2010
fDate
23-28 May 2010
Firstpage
296
Lastpage
299
Abstract
Fully integrated novel magnetically-actuated dielectric cantilever MEMS switches suitable for high frequency RF applications are reported. A four-mask fabrication process has been developed to produce the MEMS switches with integrated current coils on both the substrate and the dielectric cantilever. The switches are actuated using an electromagnetic force and held in the DOWN state using an electrostatic force. DC actuation currents around 110 mA have been measured to be sufficient for operating the switch. The beam is maintained at DOWN state with the application of a potential difference as low as 24 V between the coils. In terms of the RF performance, the insertion and return losses are lower than -0.3 dB and -24 dB, respectively; and isolation is higher than 34 dB up to 10 GHz. To enhance the switch reliability, it is feasible to force the device into the UP state using a repulsive electromagnetic force in the case of release failure or stiction.
Keywords
cantilevers; microfabrication; microswitches; RF MEMS switches; electromagnetic force; four-mask fabrication; high frequency RF applications; integrated current coils; magnetically actuated dielectric cantilever; substrate cantilever; Coils; Dielectric substrates; Electromagnetic forces; Electrostatics; Fabrication; Magnetic switching; Microswitches; Radio frequency; Radiofrequency microelectromechanical systems; Switches; Dielectric cantilever; MEMS Switch; Magnetic actuation; RF MEMS;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International
Conference_Location
Anaheim, CA
ISSN
0149-645X
Print_ISBN
978-1-4244-6056-4
Electronic_ISBN
0149-645X
Type
conf
DOI
10.1109/MWSYM.2010.5516847
Filename
5516847
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