Title :
Fully-implantable auditory prostheses: restoring hearing to the profoundly deaf
Author :
Wise, K.D. ; Najafi, K.
Author_Institution :
Eng. Res. Center for Wireless Integrated MicroSystems, Michigan Univ., Ann Arbor, MI, USA
Abstract :
Present cochlear prostheses employ up to 24 electrodes to electrically stimulate the auditory nerve with currents of 200-800 /spl mu/A, charge-balanced pulse rates of 100 Kpps or more, and pulse widths of 20-200 /spl mu/sec/phase. To explore performance limits, MEMS-based microsystems will soon provide as many as 128 electrode sites and up to 16 parallel data channels. Fully-implantable microsystems for the cochlear nucleus are also being developed using 3D arrays of penetrating electrodes. Button-size implant prototypes with 1024 multiplexed electrode sites on 400 /spl mu/m centers have been realized. Packaging techniques are consistent with many decades of use in-vivo, while wireless interfaces can provide data at over 1 Mb/s in addition to power. These implantable microsystems will restore hearing to an expanding population of individuals during the coming decade as well as serve as a generic platform for dealing with a number of other disorders.
Keywords :
artificial organs; biomedical electrodes; ear; hearing aids; micromechanical devices; neurophysiology; 1 Mbit/s; 200 to 800 muA; MEMS-based microsystems; auditory nerve; button-size implant prototypes; charge-balanced pulse rates; cochlear nucleus; cochlear prostheses; disorders; fully-implantable auditory prostheses; fully-implantable microsystems; generic platform; hearing; implantable microsystems; individuals; multiplexed electrode sites; packaging techniques; parallel data channels; penetrating electrodes; performance limits; population; power; profoundly deaf; pulse widths; three dimensional arrays; wireless interfaces; Auditory system; Deafness; Electrodes; Frequency; Implants; Neural prosthesis; Packaging; Prosthetics; Prototypes; Space vector pulse width modulation;
Conference_Titel :
Electron Devices Meeting, 2002. IEDM '02. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7462-2
DOI :
10.1109/IEDM.2002.1175889