Title :
4 Mbit embedded FRAM for high performance System on Chip (SoC) with large switching charge, reliable retention and high imprint resistance
Author :
Horii, Y. ; Hikosaka, Y. ; Itoh, A. ; Matsuura, K. ; Kurasawa, M. ; Komuro, G. ; Maruyama, K. ; Eshita, T. ; Kashiwagi, S.
Author_Institution :
FRAM Div., Fujitsu Ltd., Atsugi, Japan
Abstract :
A 0.18 /spl mu/m 4 Mbit FRAM for high performance System on Chip (SoC) was developed. Large polarization and high reliability were achieved with a [111] oriented MOCVD PZT. We also developed new capacitor fabrication technology, recessed Ir barriers and high temperature one mask etching. We achieved an embedded FRAM with only two additional masks for a conventional CMOS process.
Keywords :
CMOS integrated circuits; MOCVD; embedded systems; ferroelectric capacitors; ferroelectric storage; integrated circuit reliability; sputter etching; system-on-chip; 0.18 micron; 4 Mbit; 4 Mbit embedded FRAM; CMOS process; Ir; PZT; PZT capacitor reliability; PbZrO3TiO3; [111] oriented MOCVD PZT; additional masks; capacitor fabrication technology; high imprint resistance; high performance system on chip; high reliability; high temperature one mask etching; large polarization; recessed Ir barrier; reliable retention; switching charge; CMOS technology; Capacitors; Fabrication; Ferroelectric films; MOCVD; Nonvolatile memory; Polarization; Random access memory; System-on-a-chip; Temperature;
Conference_Titel :
Electron Devices Meeting, 2002. IEDM '02. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7462-2
DOI :
10.1109/IEDM.2002.1175898
