DocumentCode
3130833
Title
QDAME simulation of 7.5 nm double-gate Si nFETs with differing access geometries
Author
Laux, S.E. ; Kumar, A. ; Fischetti, M.V.
Author_Institution
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
fYear
2002
fDate
8-11 Dec. 2002
Firstpage
715
Lastpage
718
Abstract
We describe QDAME, a new device simulation program which solves self-consistently the Poisson and Schrodinger equations in two space dimensions under the approximation of ballistic transport. The effects of differing access geometries on 7.5 nm double-gate Si FETs are discussed.
Keywords
MOSFET; Poisson equation; Schrodinger equation; ballistic transport; quantum interference devices; semiconductor device models; tunnelling; 7.5 nm; Poisson equation; QDAME simulation; Schrodinger equation; Si-SiO/sub 2/; access geometry effect; ballistic transport approximation; device simulation program; double-gate Si nFETs; quantum device analysis using modal evaluations; self-consistent solution; Boundary conditions; Convergence; Double-gate FETs; Electrons; Information geometry; Potential energy; Reflection; Sampling methods; Schrodinger equation; Solid modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2002. IEDM '02. International
Conference_Location
San Francisco, CA, USA
Print_ISBN
0-7803-7462-2
Type
conf
DOI
10.1109/IEDM.2002.1175938
Filename
1175938
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