Electromigration reliability of Cu interconnects and effects of low K dielectrics

Author

Ho, P.S. ; Lee, K.-D. ; Ogawa, E.T. ; Lu, X. ; Matsuhashi, H. ; Blaschke, V.A. ; Augur, R.

Author_Institution

Microelectron. Res. Center, Texas Univ., Austin, TX, USA

fYear

2002

fDate

8-11 Dec. 2002

Firstpage

741

Lastpage

744

Abstract

Electromigration (EM) reliability in Cu dual-damascene structures integrated with oxide and low k ILD was investigated using a statistical approach. This approach is efficient in addressing early failures using multi-link structures to sample very large number of interconnect elements. In this paper, we summarize results first on early failures of Cu/oxide structures, then EM characteristics of Cu/low k structures are discussed and compared with Cu/oxide structures. The integration of low k ILD was found to degrade EM performance and to induce a new failure mechanism. These results can be attributed to the thermomechanical properties of the low k ILD and its implication on EM reliability will be discussed.

Keywords

copper; dielectric thin films; electromigration; failure analysis; integrated circuit interconnections; integrated circuit reliability; Cu; Cu interconnect; dual damascene structure; electromigration reliability; failure statistics; low-k ILD; low-k dielectric; multi-link structure; oxide ILD; thermomechanical properties; Cathodes; Degradation; Dielectric devices; Electromigration; Failure analysis; Instruments; Microelectronics; Temperature; Testing; Thermomechanical processes;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2002. IEDM '02. International

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-7462-2

Type

conf

DOI

10.1109/IEDM.2002.1175944

Filename

1175944