A flexible, low-cost, high performance SiGe:C BiCMOS process with a one-mask HBT module

Author

Knoll, D. ; Ehwald, K.E. ; Heinemann, B. ; Fox, A. ; Blum, K. ; Rücker, H. ; Furnhammer, F. ; Senapati, B. ; Barth, R. ; Haak, U. ; Höppner, W. ; Drews, J. ; Kurps, R. ; Marschmeyer, S. ; Richter, H.H. ; Grabolla, T. ; Kuck, B. ; Fursenko, O. ; Schley, P.

Author_Institution

IHP, Frankfurt, Germany

fYear

2002

fDate

8-11 Dec. 2002

Firstpage

783

Lastpage

786

Abstract

We demonstrate an extremely simple, flexible, and hence low-cost SiGe:C BiCMOS process with ample performance for the majority of high volume applications. This technology offers three HBT devices with f/sub T//BV/sub CEO/ values of 28 GHz/67 GHz/7.5 V; 52 GHz/98 GHz/3.8 V; and 75 GHz/ 90 GHz/2.4 V by adding only one mask to the underlying CMOS process.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; carbon; heterojunction bipolar transistors; integrated circuit reliability; masks; semiconductor device breakdown; semiconductor materials; 2.4 to 7.5 V; 28 to 98 GHz; BiCMOS process; SiGe; SiGe:C; high volume applications; mask; one-mask HBT module; speed/breakdown voltages; underlying CMOS process; Artificial intelligence; BiCMOS integrated circuits; CMOS process; CMOS technology; Fabrication; Germanium silicon alloys; Heterojunction bipolar transistors; Implants; Lithography; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2002. IEDM '02. International

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-7462-2

Type

conf

DOI

10.1109/IEDM.2002.1175955

Filename

1175955