Title :
A novel silicon Geiger-mode avalanche photodiode
Author :
Jackson, J.C. ; Morrison, A.P. ; Phelan, D. ; Mathewson, A.
Author_Institution :
Nat. Microelectron. Res. Centre, Cork, Ireland
Abstract :
Dark count nonlinearity in CMOS compatible, single photon counting, Geiger-mode avalanche photodiodes (GM-APD) has been investigated. A novel structure was designed, fabricated, and characterized to allow dark count optimization. Dark count levels for the proposed structure are shown to scale linearly with area.
Keywords :
avalanche photodiodes; elemental semiconductors; photodetectors; silicon; Geiger-mode APD; Si; Si avalanche photodiodes; dark count nonlinearity; dark count optimization; single photon counting; Avalanche photodiodes; Biosensors; CMOS process; CMOS technology; Detectors; Electric breakdown; Fluorescence; Optical signal processing; Silicon; System-on-a-chip;
Conference_Titel :
Electron Devices Meeting, 2002. IEDM '02. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7462-2
DOI :
10.1109/IEDM.2002.1175958
