Active pixel image sensor scale down in 0.18 /spl mu/m CMOS technology

Author

Chien, Ho-Ching ; Wuu, Shou-Gwo ; Yaung, Dun-Nian ; Tseng, Chien-Hsien ; Lin, Jeng-Shyan ; Wang, Chung S. ; Chang, Chin-Kung ; Hsiao, Yu-Kung

Author_Institution

Taiwan Semicond. Manuf. Co., Hsin-Chu, Taiwan

fYear

2002

fDate

8-11 Dec. 2002

Firstpage

813

Lastpage

816

Abstract

A high performance 0.18 /spl mu/m CMOS image sensor technology is reported in this paper. It is modified from a generic logic technology. A 64/spl times/64 3T pixel array of various pixel size from 2.8 /spl mu/m to 4.0 /spl mu/m is used to study the scale down issues. By optimizing the process flow, the image sensors with the pixel size downscaled to 2.8 /spl mu/m demonstrates the high sensitivity, low dark current, low white pixel rate and high dynamic range. Although the crosstalk effect is getting worse for smaller pixel size, the 3 /spl mu/m pixel array demonstrates an excellent color rendition capability.

Keywords

CMOS image sensors; colour; crosstalk; integrated circuit technology; sensitivity; 0.18 micron; 2.8 to 4 micron; CMOS image sensor; active pixel image sensor; colour rendition capability; crosstalk effect; deep submicron CMOS technology; high dynamic range; high sensitivity; low dark current; process flow optimization; scaling issues; CMOS image sensors; CMOS logic circuits; CMOS technology; Computational Intelligence Society; Diodes; Image sensors; Logic arrays; Logic design; Logic devices; Pixel;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2002. IEDM '02. International

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-7462-2

Type

conf

DOI

10.1109/IEDM.2002.1175962

Filename

1175962