Title :
A novel robust TiN/AHO/TiN capacitor and CoSi/sub 2/ cell pad structure for 70nm stand-alone and embedded DRAM technology and beyond
Author :
Park, J.M. ; Hwang, Y.S. ; Hwang, D.S. ; Hwang, H.K. ; Lee, S.H. ; Kim, G.Y. ; Jeong, M.Y. ; Park, Bong Joo ; Kim, S.E. ; Cho, M.H. ; Kim, Dong In ; Chung, J.-H. ; Park, I.S. ; Yoo, C.-Y. ; Lee, J.H. ; Nam, B.Y. ; Park, Y.R. ; Kim, Chang-Sei ; Sun, M.-C.
Author_Institution :
Adv. Technol. Dev., Samsung Electron. Co, Kyunggi-Do, South Korea
Abstract :
For the first time, a novel robust (square-shape cylinder type) TiN/AHO (Al/sub 2/O/sub 3/-HfO/sub 2/)/TiN capacitor with Co-silicide on landing cell pad suitable for both stand-alone and embedded DRAMs are successfully developed with 88nm (pitch 176nm) feature size, which is the smallest feature size ever reported in DRAM technology, using ArF lithography for aiming 70nm stand-alone and embedded DRAM technology. The capacitor with Toxeq of 1.5nm and leakage current of less than 1 fA/cell is achieved. The cell contact resistance is greatly improved by using Co-silicidation on landing cell pad and metal storage node contact plug, which results in high performance.
Keywords :
DRAM chips; MIM devices; alumina; capacitors; cobalt compounds; contact resistance; hafnium compounds; leakage currents; titanium compounds; 70 nm; ArF lithography; Co-silicidation; CoSi/sub 2/; CoSi/sub 2/ landing cell pad; TiN-Al/sub 2/O/sub 3/HfO/sub 2/-TiN; TiN/AHO/TiN capacitor; contact resistance; embedded DRAM; equivalent oxide thickness; leakage current; metal storage node contact plug; stand-alone DRAM; Atherosclerosis; Capacitance; Contact resistance; Leakage current; MIM capacitors; Plugs; Random access memory; Robust stability; Robustness; Tin;
Conference_Titel :
Electron Devices Meeting, 2002. IEDM '02. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7462-2
DOI :
10.1109/IEDM.2002.1175964
