100-Gbit/s logic IC using 0.1-/spl mu/m-gate-length InAlAs/InGaAs/InP HEMTs

Author

Murata, K. ; Sano, K. ; Kitabayashi, H. ; Sugitani, S. ; Sugahara, H. ; Enoki, T.

Author_Institution

NTT Photonics Labs., NTT Corp., Atsugi, Japan

fYear

2002

fDate

8-11 Dec. 2002

Firstpage

937

Lastpage

939

Abstract

High-speed electrical multiplexing and demultiplexing are keys in optical fiber communication systems. In the last few years, multiplexing operations at over 80 Gbit/s have been reported for selector ICs using InP HEMT and InP HBT technologies. The record operating speed is, however, still 90 Gbit/s, which was characterized only by means of a waveform observation on digitizing sampling oscilloscope. This paper describes 100-Gbit/s multiplexing and demultiplexing error-free logic operations in InP HEMT technology.

Keywords

HEMT integrated circuits; III-V semiconductors; aluminium compounds; demultiplexing; field effect logic circuits; gallium arsenide; high-speed integrated circuits; indium compounds; multiplexing; 0.1 micron; 100 Gbit/s; InAlAs-InGaAs-InP; InAlAs/InGaAs/InP HEMT; electrical demultiplexing; electrical multiplexing; error-free operation; high-speed logic IC; Demultiplexing; HEMTs; Heterojunction bipolar transistors; Indium compounds; Indium gallium arsenide; Indium phosphide; Logic; MODFETs; Optical fiber communication; Sampling methods;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2002. IEDM '02. International

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-7462-2

Type

conf

DOI

10.1109/IEDM.2002.1175990

Filename

1175990