DocumentCode
3131985
Title
A practical PZT dry etching process that increases the top electrode contact reliability in pyroelectric detector arrays by using a MORITM high density plasma system
Author
Thomas, D.J. ; Song, Y.P. ; Powell, K. ; Bruchhaus, R.
Author_Institution
Trikon Technol., Newport, UK
fYear
2001
fDate
2001
Firstpage
81
Lastpage
83
Abstract
This paper describes a practical dry etching process for PZT. Results are presented that demonstrate a high rate, fence-free process that can be applied to thick PZT layers such as those used in pyroelectric detector arrays. The process relies upon the use of a MORI high density plasma system. When used in combination with a subsequent wet etch, it is possible to significantly improve the capacitor definition and maintain selectivity to the Pt electrode. The combined process results in an improvement in the reliability of the top electrode contact of such devices
Keywords
arrays; electrical contacts; electrodes; ferroelectric capacitors; infrared detectors; lead compounds; plasma materials processing; pyroelectric detectors; semiconductor device metallisation; sputter etching; MORI high density plasma system; PZT; PZT dry etching process; PbZrO3TiO3; Pt; capacitor definition; dry etching process; etch selectivity; fence-free process; pyroelectric detector arrays; reliability; thick PZT layers; top electrode contact; top electrode contact reliability; wet etch; Detectors; Dry etching; Electrodes; Magnetooptic recording; Plasma applications; Plasma density; Plasma devices; Pyroelectricity; Sensor arrays; Wet etching;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Semiconductor Manufacturing Conference, 2001 IEEE/SEMI
Conference_Location
Munich
ISSN
1078-8743
Print_ISBN
0-7803-6555-0
Type
conf
DOI
10.1109/ASMC.2001.925621
Filename
925621
Link To Document