• DocumentCode
    3131999
  • Title

    High-capacitance Cu/Ta2O5/Cu MIM structure for SoC applications featuring a single-mask add-on process

  • Author

    Ishikawa, Tsuyoshi ; Kodama, Daisuke ; Matsui, Yuichi ; Hiratani, Masahiko ; Furusawa, Takeshi ; Hisamoto, Digh

  • Author_Institution
    Central Res. Lab., Hitachi Ltd., Kokubunji, Japan
  • fYear
    2002
  • fDate
    8-11 Dec. 2002
  • Firstpage
    940
  • Lastpage
    942
  • Abstract
    This paper presents a metal-insulator-metal capacitor for SoC applications which has the highest capacitance density (up to 12 fF//spl mu/m/sup 2/) ever reported for a device in this field. The simple MIM structure allowed development of the process as a single-mask add-on to conventional Cu BEOL processing.
  • Keywords
    MIM structures; capacitors; copper; masks; system-on-chip; tantalum compounds; Cu BEOL processing; Cu-Ta/sub 2/O/sub 5/-Cu; Cu/Ta/sub 2/O/sub 5//Cu MIM structure; SoC application; capacitance density; metal-insulator-metal capacitor; single-mask add-on process; Capacitance; Electrodes; Electromagnetic heating; Laboratories; Lead; Leakage current; MIM capacitors; Metal-insulator structures; Microwave devices; Radio frequency;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2002. IEDM '02. International
  • Conference_Location
    San Francisco, CA, USA
  • Print_ISBN
    0-7803-7462-2
  • Type

    conf

  • DOI
    10.1109/IEDM.2002.1175991
  • Filename
    1175991
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3131999