MOCVD growth and characterization of tensile-strained GaxIn1-xAsyP1-y quantum wells for low threshold lasers emitting at 1.3 μm

Tensile-strained GaInAsP/InP quantum wells (QWs) grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) are investigated for 1.3 μm laser applications. High resolution X-ray diffraction shows good agreement with theoretical simulation. Photoluminescence spectra have well defined energy separation due to biaxial tension. The lowest threshold current density for infinite cavity length J_th/N_w^∞ of 100 A/cm ² is obtained for the device with -1.15% strain and N_w =3. The amount of strain which gives the lowest J_th/N _w^∞ is around -1.2%. The tensile strained QW laser emitting at 1.3 μm is attractive as the light source for fiber in the loop application