Title :
InGaAs/InP MOS Single Photon Detector
Author :
Kai Zhou ; Zhang, Arthur ; Kang, Yi-min ; Lo, Yu-Hwa
Author_Institution :
Dept. of Phys., California Univ., San Diego, La Jolla, CA
Abstract :
The intrinsic advantage of negative feedback mechanism in InGaAs/InP based MOS-APDs for increased gain-bandwidth product is illustrated through simulation. Fabricated devices under dark conditions in Geiger mode demonstrate single photon sensitivity and suppressed intensity noise
Keywords :
III-V semiconductors; MIS devices; avalanche photodiodes; gallium arsenide; indium compounds; photodetectors; Geiger mode; InGaAs-InP; InGaAs-InP MOS-APD; negative feedback; single photon detector; single photon sensitivity; Indium gallium arsenide; Indium phosphide; Negative feedback; Optical noise; Optical surface waves; Plasma applications; Plasma temperature; Semiconductor device noise; Surface treatment; Testing;
Conference_Titel :
Lasers and Electro-Optics Society, 2006. LEOS 2006. 19th Annual Meeting of the IEEE
Conference_Location :
Montreal, Que.
Print_ISBN :
0-7803-9555-7
Electronic_ISBN :
0-7803-9555-7
DOI :
10.1109/LEOS.2006.279000
