Preparation of homogeneous InP substrates by VGF-growth and wafer annealing

Author

Hirt, G. ; Hoffmann, B. ; Kretzer, U. ; Woitech, A. ; Zemke, D. ; Müller, G.

Author_Institution

Inst. fur Werkstoffwissenschaften, Erlangen-Nurnberg Univ., Germany

fYear

1995

fDate

9-13 May 1995

Firstpage

33

Lastpage

36

Abstract

We have analyzed the microscopic and macroscopic uniformity of as-grown and annealed low Fe-doped InP-wafers grown by different methods (LEC, vertical gradient freeze). Though the annealing is advantageous with respect to the levelling of striations, additional non-uniformity on the microscopic scale is created. The origin of these spots of enhanced photoluminescence might be related to a gettering of Fe at dislocations, which in consequence leaves a vicinity with a reduced Fe-concentration

Keywords

III-V semiconductors; annealing; crystal growth from melt; dislocation etching; doping profiles; indium compounds; photoluminescence; semiconductor doping; semiconductor growth; substrates; InP:Fe; VGF-growth; annealed low Fe-doped InP-wafers; as-grown low Fe-doped InP-wafers; dislocations; enhanced photoluminescence; gettering; homogeneous InP substrates; macroscopic uniformity; microscopic uniformity; nonuniformity; reduced Fe-concentration; striations; vertical gradient freeze; wafer annealing; Annealing; Atmosphere; Charge measurement; Etching; Gettering; Indium phosphide; Iron; Microscopy; Photoluminescence; Spatial resolution;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on

Conference_Location

Hokkaido

Print_ISBN

0-7803-2147-2

Type

conf

DOI

10.1109/ICIPRM.1995.522069

Filename

522069