10-MB/s multi-level programming of Gb-scale flash memory enabled by new AG-AND cell technology

This paper describes the first exhaustive study of a multi-level flash memory cell that achieves a programming throughput of over 10 MB/s. We reveal that increasing the individual cell programming speed (2 /spl mu/s), reducing the distribution in cell programming speeds (1.2 V), and reducing the inter-floating gate coupling to reduce Vth shift (0.15 V) are required. These three specifications are achieved by a new AG-AND cell technology consisting of self-aligned isolated punch-through stopper (SAIPTS) and U-shaped floating. This results in multilevel programming faster than 10 MB/s for the first time.