Fabrication of a polarization insensitive electroabsorption modulator with strained InGaAs/InAlAs MQW by MOVPE

Author

Kondo, Susumu ; Wakita, Kouichi ; Noguchi, Yoshio ; Yoshimoto, Naoto

Author_Institution

NTT Opto-Electron. Labs., Kanagawa, Japan

fYear

1995

fDate

9-13 May 1995

Firstpage

61

Lastpage

64

Abstract

Strained InGaAs/InAlAs multi-quantum well (MQW) layers are grown by a low pressure MOVPE. Introduction of compressive strain into an InAlAs barrier layer against a tensile strained well layer makes it possible to grow an MQW layer with good quality. By using these layers, we have also demonstrated strained InGaAs/InAlAs MQW electroabsorption modulators with a polarization insensitivity

Keywords

III-V semiconductors; aluminium compounds; electro-optical modulation; electroabsorption; gallium arsenide; indium compounds; optical fabrication; semiconductor growth; semiconductor quantum wells; vapour phase epitaxial growth; InAlAs barrier layer a; InGaAs-InAlAs; MOVPE; compressive strain; fabrication; good quality; low pressure MOVPE; multi-quantum well layers; polarization insensitive electroabsorption modulator; polarization insensitivity; strained InGaAs/InAlAs MQW; tensile strained well layer; Epitaxial growth; Epitaxial layers; Fabrication; Indium compounds; Indium gallium arsenide; Optical films; Optical modulation; Polarization; Quantum well devices; Tensile strain;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on

Conference_Location

Hokkaido

Print_ISBN

0-7803-2147-2

Type

conf

DOI

10.1109/ICIPRM.1995.522076

Filename

522076