DocumentCode :
3132289
Title :
Low-noise, high-speed Ga0.47In0.53As/Al0.48In0.52 As 0.1-μm MODFETs and high-gain/bandwidth three-stage amplifier fabricated on GaAs substrate
Author :
Rohdin, Hans ; Nagy, Avelina ; Robbins, Virginia ; Su, Chung-yi ; Madden, Chris ; Wakita, Arlene ; Raggio, J. ; Seeger, Judith
Author_Institution :
Hewlett-Packard Co., Palo Alto, CA, USA
fYear :
1995
fDate :
9-13 May 1995
Firstpage :
73
Lastpage :
76
Abstract :
We report on 0.1-μm-gate Ga0.47In0.53As/Al0.48In0.52 As MODFETs fabricated on GaAs substrates by means of the linearly-graded low-temperature buffer-layer (LGLTBL) MBE growth technique. Comparing with control devices on InP substrates we conclude that this is a very promising approach for improved manufacturability with uncompromised performance. GaAs- and InP-substrate MODFETs have a similar combination of maximum current and breakdown voltage. GaAs-substrate MODFETs have lower gate leakage and improved pinchoff. The lower leakage reduces the noise, and on a wafer with low interfacial gate resistance a median minimum noise figure of 0.25 dB at 12 GHz, with 15 dB associated gain, was measured on wafer. High cutoff frequencies are maintained when switching to the GaAs substrate, and the gm -dispersion is reduced. Despite larger dislocation density, mostly contained by the LGLTBL, the FET yield on GaAs appears to be comparable to that on InP. Three-stage amplifiers have been demonstrated with low-frequency gain and bandwidth as high as 33 dB and 20 GHz, respectively
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; aluminium compounds; field effect MMIC; gallium arsenide; high electron mobility transistors; indium compounds; leakage currents; microwave field effect transistors; molecular beam epitaxial growth; semiconductor device noise; semiconductor growth; 0.1 mum; 0.25 dB; 12 GHz; 15 dB; 20 GHz; 33 dB; FET yield; Ga0.47In0.53As-Al0.48In0.52 As; Ga0.47In0.53As/Al0.48In0.52 As MODFETs; GaAs; GaAs substrate; breakdown voltage; dislocation density; gate leakage; high cutoff frequencies; linearly-graded low-temperature buffer-layer MBE growth; low interfacial gate resistance; low-frequency gain; manufacturability; maximum current; median minimum noise figure; pinchoff; three-stage amplifier; transconductance dispersion; Electrical resistance measurement; Gain; Gallium arsenide; Gate leakage; HEMTs; Indium phosphide; MODFETs; Manufacturing; Noise figure; Noise reduction;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Conference_Location :
Hokkaido
Print_ISBN :
0-7803-2147-2
Type :
conf
DOI :
10.1109/ICIPRM.1995.522079
Filename :
522079
Link To Document :
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