A low stress switch applied on the optical network based upon CMOS-MEMS common process

Author

Tsai, Chien-Chung ; Tsai, Shang-Che ; Liu, Chi-Tsang

Author_Institution

Dept. of Optoelectron. Syst. Eng., Minghsin Univ. of Sci. & Technol., Hsinchu, Taiwan

fYear

2010

fDate

15-17 June 2010

Firstpage

662

Lastpage

667

Abstract

A low stress switch applied on the optical network based upon CMOS-MEMS common process was proposed in this study. The effects of the width of lateral connection arm, the lengths of longitudinal connection arm and the supporting arm on the displacement of out of plane and the lateral stress of the device were investigated to find the optimum dimension through the study of simulation. The maximum displacement of the optimum design was achieved to 41.9 μm and the tilt angle was 6.47°. The surface deformation of the micro mirror was 0.00056 μm/μm. The maximum lateral stress was 132.1 MPa located on the PolySi layer, and that was far lower than the ultimate stress of PolySi. The threshold voltage of Poly 1 layer in the process was 5.2 V after the electrical measurement of the released device, when the optical device was loaded on the thermal actuator.

Keywords

micromachining; micromirrors; optical fibre networks; optical switches; CMOS-MEMS common process; low stress switch; maximum displacement; optical network; voltage 5.2 V; Optical fiber networks; Optical switches; Stress; CMOS-MEMS; Micro mirror; Optical network; Ultimate stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Industrial Electronics and Applications (ICIEA), 2010 the 5th IEEE Conference on

Conference_Location

Taichung

Print_ISBN

978-1-4244-5045-9

Electronic_ISBN

978-1-4244-5046-6

Type

conf

DOI

10.1109/ICIEA.2010.5517000

Filename

5517000