Reduction of dislocation densities in InP single crystals by the TB-LEC method

Author

Hirano, R. ; Uchida, M.

Author_Institution

Compound Semicond. Mater. Dept., Japan Energy Corp., Ibaraki, Japan

fYear

1995

fDate

9-13 May 1995

Firstpage

97

Lastpage

100

Abstract

We have developed a modified LEC method with a thermal baffle (TB), by which low dislocation density InP crystals can be grown. In this method, a thermal baffle is set on top of the crucible in order to suppress the gas convection and thus to improve the temperature gradient in the LEC furnace. The dislocation density depends not only on the temperature gradient but also on the other growth conditions, such as crystal/crucible rotational speeds, cooling conditions, and crucible weight. The rotational condition is an important factor for the reduction of the dislocation density since the solid/liquid (SL)interface shape changes with the rotational conditions

Keywords

III-V semiconductors; crystal growth from melt; dislocation density; dislocation etching; indium compounds; semiconductor growth; InP; InP single crystals; LEC furnace; TB-LEC method; cooling conditions; crucible; crucible weight; crystal/crucible rotational speeds; dislocation densities; gas convection; growth conditions; low dislocation density; modified LEC method; rotational condition; solid/liquid interface shape; temperature gradient; thermal baffle; Area measurement; Cooling; Crystals; Density measurement; Indium phosphide; Iron; Semiconductor materials; Temperature dependence; Tin; Zinc;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on

Conference_Location

Hokkaido

Print_ISBN

0-7803-2147-2

Type

conf

DOI

10.1109/ICIPRM.1995.522085

Filename

522085