Photoconductivity and photoluminescence of Cu diffused p-InP

Author

Pal, D. ; Bose, D.N.

Author_Institution

Mater. Sci. Centre, Indian Inst. of Technol., Kharagpur, India

fYear

1995

fDate

9-13 May 1995

Firstpage

112

Lastpage

114

Abstract

Photoconductivity and photoluminescence measurements were carried out on Cu diffused p-InP in the temperature range 70 K-350 K and 10 K-140 K respectively. With 35 mW/cm² He-Ne laser radiation a high value of I_ph/I_d=2.6J10⁵ was obtained at 200 K which decreased to 800 at 300 K. The Cu related emission band was obtained at 1.216 eV. From the line-shape and line-width analysis of the emission spectrum the vibrational energy for the ground and excited states were found to be 38 and 14 meV respectively. The configuration co-ordinate diagram of the defect was calculated which showed a small lattice relaxation

Keywords

III-V semiconductors; copper; excited states; ground states; impurity states; indium compounds; photoconductivity; photoluminescence; spectral line breadth; 1.216 eV; 10 to 140 K; 14 meV; 38 meV; 70 to 350 K; Cu diffused p-InP; Cu related emission band; He-Ne; He-Ne laser radiation; InP:Cu; configuration co-ordinate diagram; emission spectrum; excited states; ground states; line-shape analysis; line-width analysis; photoconductivity; photoluminescence; small lattice relaxation; vibrational energy; Argon; Conductivity; Copper; Indium phosphide; Laser theory; Materials science and technology; Photoconducting materials; Photoconductivity; Photoluminescence; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on

Conference_Location

Hokkaido

Print_ISBN

0-7803-2147-2

Type

conf

DOI

10.1109/ICIPRM.1995.522089

Filename

522089