DocumentCode
3132732
Title
Marginal test of DRAMs by masked α-radiation
Author
Gleis, D. ; Hoffmann, K.
Author_Institution
Fakultat fur Elektrotech., Univ. der Bundeswehr Munchen, Neubiberg, West Germany
fYear
1988
fDate
16-19 May 1988
Abstract
A marginal test of DRAMs (dynamic random-access memories) by masked α-radiation has been performed at all operation conditions. The averaged soft error rates (SERs) of individual circuits have been determined. Differences in SERs are used to analyze design margins and process tolerances. Measurements on a 256K DRAM show that asymmetric sense amplifiers caused by process tolerances can be discovered
Keywords
alpha-particle effects; integrated circuit testing; integrated memory circuits; random-access storage; 256 kbits; DRAMs; asymmetric sense amplifiers; averaged soft error rates; design margins; masked α-radiation; operation conditions; process tolerances; Capacitance; Circuit testing; Differential amplifiers; Electron beams; Error analysis; Pattern analysis; Performance evaluation; Process design; Random access memory; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Custom Integrated Circuits Conference, 1988., Proceedings of the IEEE 1988
Conference_Location
Rochester, NY
Type
conf
DOI
10.1109/CICC.1988.20948
Filename
20948
Link To Document